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BQ76PL455APFCT 데이터시트(PDF) 7 Page - Texas Instruments

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부품명 BQ76PL455APFCT
상세설명  16-Cell Industrial Integrated Battery Monitor
PDF  125 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

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bq76PL455A
www.ti.com
SLUSCL0A – SEPTEMBER 2016 – REVISED OCTOBER 2016
Product Folder Links: bq76PL455A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Unless otherwise noted, voltages are given with respect to device commons (AGND1–3, DGND1–3, CGND) tied together (device VSS
or GND).
(3)
Specified by design, not tested in production.
(4)
Must meet all stated conditions for the TOP pin at all times.
(5)
Must short the highest-connected cell to the unused VSENSEn inputs above it in configurations that use < 16 cells. For example, a 14-
cell configuration must short pins VSENSE14, VSENSE15, VSENSE16.
6 Specifications
6.1 Absolute Maximum Ratings
over specified Ambient Temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VP
–0.3
6
V
VDIG
–0.3
6
V
VIO
–0.3
6
V
AUX0–7
Lesser of two MAX values
–0.3
6 or (VP + 0.3)
V
COMMH+, COMMH–, COMML+, COMMH–,
FAULTH+, FAULTH–, FAULTL+, FAULTL–
Lesser of two MAX values
–0.3
6 or (V5VAO + 0.3)
V
AC pulse specification(3) for these eight
pins only:
Vpk maximum ≤ 6.5 V for 100 ns or less,
100 kHz
≤ f ≤ 400 MHz
–0.3
6.5
Vpk
GPIO0–5
Lesser of two MAX values
–0.3
6 or (VIO + 0.3)
V
RX
Lesser of two MAX values
–0.3
6 or (VIO + 0.3)
V
TOP (4)
–0.3
88
V
TOP to VSENSE16 delta(4)(5)
(VSENSE16 + 5.5 V)
≥ TOP ≥
(VSENSE16 – 1 V)
(VSENSE16 – 1 V)
(VSENSE16 + 5.5 V)
V
VSENSE0
–0.3
0.3
V
VSENSEn – VSENSEn–1
n = 1 to 16
–0.3
5.5
V
n = 1 to 16, 0.1% duty cycle
–0.3
6.5
WAKEUP
–0.3
6
V
Ambient free-air temperature, TA
–40
105
⁰C
Junction temperature, TJ
–40
125
⁰C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)
All pins
±2000
V
Charged-device model (CDM),per JEDEC
specification JESD22-C101(2)
All pins except 1, 20, 21, 40, 41, 60, 61,
76, and 80
±500
Pin 76
±450
Corner pins (1, 20, 21, 40, 41, 60, 61,
and 80)
±750



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