전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

MIC28511-2YFL 데이터시트(PDF) 21 Page - Microchip Technology

부품명 MIC28511-2YFL
상세설명  60VIN, 3A Synchronous Buck Regulator
PDF  34 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  MICROCHIP [Microchip Technology]
홈페이지  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MIC28511-2YFL 데이터시트(HTML) 21 Page - Microchip Technology

Back Button MIC28511-2YFL Datasheet HTML 17Page - Microchip Technology MIC28511-2YFL Datasheet HTML 18Page - Microchip Technology MIC28511-2YFL Datasheet HTML 19Page - Microchip Technology MIC28511-2YFL Datasheet HTML 20Page - Microchip Technology MIC28511-2YFL Datasheet HTML 21Page - Microchip Technology MIC28511-2YFL Datasheet HTML 22Page - Microchip Technology MIC28511-2YFL Datasheet HTML 23Page - Microchip Technology MIC28511-2YFL Datasheet HTML 24Page - Microchip Technology MIC28511-2YFL Datasheet HTML 25Page - Microchip Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 21 / 34 page
background image
 2016 Microchip Technology Inc.
DS20005520A-page 21
MIC28511
short limit; otherwise the supply will go into hiccup
mode and may not be finishing the soft-start
successfully.
4.6
Power Good (PGOOD)
The power good (PGOOD) pin is an open-drain output
that indicates logic-high when the output is nominally
90% of its steady state voltage.
4.7
MOSFET Gate Drive
The Functional Block Diagram shows a bootstrap
circuit, consisting of DBST, CBST, and RBST. This circuit
supplies energy to the high-side drive circuit. Capacitor
CBST is charged, while the low-side MOSFET is on,
and the voltage on the SW pin is approximately 0V.
When the high-side MOSFET driver is turned on,
energy from CBST is used to turn the MOSFET on. As
the high-side MOSFET turns on, the voltage on the SW
pin increases to approximately VIN. Diode DBST is
reverse-biased and CBST floats high while continuing to
bias the high-side gate driver. The bias current of the
high-side driver is less than 10 mA, so a 0.1 μF to 1 μF
capacitor is sufficient to hold the gate voltage with
minimal droop for the power stroke (high-side
switching) cycle, i.e. ∆BST = 10 mA x 1.25 μs/0.1 μF =
125 mV. When the low-side MOSFET is turned back
on, CBST is then recharged through the boost diode. A
30Ω resistor RBST, which is in series with the BST pin,
is required to slow down the turn-on time of the
high-side N-channel MOSFET.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com