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STM32L031C6 데이터시트(PDF) 61 Page - STMicroelectronics |
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STM32L031C6 데이터시트(HTML) 61 Page - STMicroelectronics |
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61 / 118 page ![]() DocID027063 Rev 4 61/118 STM32L031x4/6 Electrical characteristics 95 Figure 17. IDD vs VDD, at TA= 25/55/ 85/105/125 °C, Low-power run mode, code running from RAM, Range 3, MSI (Range 0) at 64 KHz, 0 WS Table 30. Current consumption in Low-power Sleep mode Symbol Parameter Conditions Typ Max(1) Unit IDD (LP Sleep) Supply current in Low-power sleep mode All peripherals off, VDD from 1.65 V to 3.6 V MSI clock, 65 kHz fHCLK = 32 kHz Flash memory OFF TA = -40 °C to 25 °C 3.2(2) - µA MSI clock, 65 kHz fHCLK = 32 kHz Flash memory ON TA = -40 °C to 25 °C 13 19 TA = 85 °C 16 21 TA = 105 °C 18.5 24 TA = 125 °C 23.5 32 MSI clock, 65 kHz fHCLK = 65 kHz, Flash memory ON TA = -40 °C to 25 °C 13.5 19 TA = 85 °C 16.5 21 TA = 105 °C 18.5 24 TA = 125 °C 24 33 MSI clock, 131 kHz fHCLK = 131 kHz, Flash memory ON TA = -40 °C to 25 °C 15.5 21 TA = 55 °C 17.5 22 TA = 85 °C 18.5 23 TA = 105 °C 21 26 TA = 125 °C 26 35 1. Guaranteed by characterization results at 125 °C, unless otherwise specified. 2. As the CPU is in Sleep mode, the difference between the current consumption with Flash memory ON and OFF (nearly 12 µA) is the same whatever the clock frequency. |
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