STM32L031C6 datasheet(77/118 Pages) STMICROELECTRONICS

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STM32L031x4/6

Electrical characteristics

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:



A supply overvoltage is applied to each power supply pin



A current injection is applied to each input, output and configurable I/O pin

Table 49. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

fOSC/fCPU

Unit

8MHz/32MHz

SEMI

Peak level

VDD 3.6 V,

TA 25 °C,

LQFP48 package

conforming to IEC61967-2

0.1 to 30 MHz

-10

dBµV

30 to 130 MHz

130 MHz to 1GHz

-5

EMI Level

1.5

Table 50. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA +25 °C,

conforming to

ANSI/JEDEC JS-001

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA +25 °C,

conforming to

ANSI/ESD STM5.3.1.

500

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