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IPL60R199CP 데이터시트(PDF) 5 Page - Infineon Technologies AG

부품명 IPL60R199CP
상세설명  Metal Oxide Semiconductor Field Effect Transistor
PDF  13 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPL60R199CP 데이터시트(HTML) 5 Page - Infineon Technologies AG

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600V CoolMOS
™ CP Power Transistor
IPL60R199CP
Electrical characteristics
Final Data Sheet
5
Rev. 2.3, 2015-10-23
4
Electrical characteristics
Electrical characteristics, at
Tj=25 °C, unless otherwise specified.
Table 4
Static characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Drain-source breakdown voltage
V
(BR)DSS
600
-
-
V
V
GS=0 V, ID=0.25 mA
Gate threshold voltage
V
GS(th)
2.5
3
3.5
V
DS=VGS, ID=0.66 mA
Zero gate voltage drain current
I
DSS
-
-
1
µA
V
DS=600 V, VGS=0 V,
T
j=25 °C
-
10
-
V
DS=600 V, VGS=0 V,
T
j=150 °C
Gate-source leakage current
I
GSS
-
-
100
nA
V
GS=20 V, VDS=0 V
Drain-source on-state resistance
R
DS(on)
-
0.18
0.199
#
V
GS=10 V, ID=9.9 A,
T
j=25 °C
-
0.47
-
V
GS=10 V, ID=9.9 A,
T
j=150 °C
Gate resistance
R
G
-
2
-
#
f=1 MHz, open drain
Table 5
Dynamic characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Input capacitance
C
iss
-
1520
-
pF
V
GS=0 V, VDS=100 V,
f=1 MHz
Output capacitance
C
oss
-
72
-
Effective output capacitance,
energy related
1)
1)
C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
C
o(er)
-
69
-
V
GS=0 V,
V
DS=0...480 V
Effective output capacitance, time
related
2)
2)
C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
C
o(tr)
-
180
-
I
D=constant, VGS=0 V
V
DS=0...480V
Turn-on delay time
t
d(on)
-
10
-
ns
V
DD=400 V,
V
GS=13 V, ID=9.9 A,
R
G= 3.3#
"see table 16)
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
50
-
Fall time
t
f
-
5
-



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