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IPL60R199CP 데이터시트(PDF) 6 Page - Infineon Technologies AG

부품명 IPL60R199CP
상세설명  Metal Oxide Semiconductor Field Effect Transistor
PDF  13 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPL60R199CP 데이터시트(HTML) 6 Page - Infineon Technologies AG

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600V CoolMOS
™ CP Power Transistor
IPL60R199CP
Electrical characteristics
Final Data Sheet
6
Rev. 2.3, 2015-10-23
Table 6
Gate charge characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Gate to source charge
Q
gs
-
8
-
nC
V
DD=480 V, ID=9.9 A,
V
GS=0 to 10 V
Gate to drain charge
Q
gd
-
11
-
Gate charge total
Q
g
-
32
-
Gate plateau voltage
V
plateau
-
5
-
V
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Diode forward voltage
V
SD
-
0.9
-
V
V
GS=0 V, IF=9.9 A,
T
j=25 °C
Reverse recovery time
t
rr
-
340
-
ns
V
R=400 V, IF=9.9 A,
d
i
F/dt=100 A/µs
(see table 18)
Reverse recovery charge
Q
rr
-
5.5
-
µC
Peak reverse recovery current
I
rrm
-
33
-
A



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