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STM32F091CB 데이터시트(PDF) 55 Page - STMicroelectronics

부품명 STM32F091CB
상세설명  ARM-based 32-bit MCU, up to 256 KB Flash, CAN, 12 timers, ADC, DAC & comm. interfaces, 2.0 - 3.6V
PDF  127 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32F091CB 데이터시트(HTML) 55 Page - STMicroelectronics

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STM32F091xB STM32F091xC
Electrical characteristics
99
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 26 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions.
Table 25. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
µs/V
VDD fall time rate
20
tVDDA
VDDA rise time rate
-
0
VDDA fall time rate
20
Table 26. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPOR/PDR(1)
1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector
monitors only VDD.
Power on/power down
reset threshold
Falling edge(2)
2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
1.80
1.88
1.96(3)
3. Data based on characterization results, not tested in production.
V
Rising edge
1.84(3)
1.92
2.00
V
VPDRhyst
PDR hysteresis
-
-
40
-
mV
tRSTTEMPO(4)
4. Guaranteed by design, not tested in production.
Reset temporization
-
1.50
2.50
4.50
ms
Table 27. Programmable voltage detector characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VPVD0
PVD threshold 0
Rising edge
2.1
2.18
2.26
V
Falling edge
2
2.08
2.16
V
VPVD1
PVD threshold 1
Rising edge
2.19
2.28
2.37
V
Falling edge
2.09
2.18
2.27
V
VPVD2
PVD threshold 2
Rising edge
2.28
2.38
2.48
V
Falling edge
2.18
2.28
2.38
V
VPVD3
PVD threshold 3
Rising edge
2.38
2.48
2.58
V
Falling edge
2.28
2.38
2.48
V
VPVD4
PVD threshold 4
Rising edge
2.47
2.58
2.69
V
Falling edge
2.37
2.48
2.59
V
VPVD5
PVD threshold 5
Rising edge
2.57
2.68
2.79
V
Falling edge
2.47
2.58
2.69
V



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