STM32F091CB datasheet(56/127 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F091xB STM32F091xC

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DocID026284 Rev 3

6.3.4

Embedded reference voltage

The parameters given in Table 28 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 24: General operating

conditions.

6.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 14: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

VPVD6

PVD threshold 6

Rising edge

2.66

2.78

2.9

Falling edge

2.56

2.68

2.8

VPVD7

PVD threshold 7

Rising edge

2.76

2.88

Falling edge

2.66

2.78

2.9

VPVDhyst(1)

PVD hysteresis

100

IDD(PVD)

PVD current consumption

0.15

0.26(1)

µA

1. Guaranteed by design, not tested in production.

Table 27. Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 28. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage –40 °C < TA < +105 °C

1.16

1.2

1.25

tSTART

ADC_IN17 buffer startup

time

10(1)

µs

tS_vrefint

ADC sampling time when

reading the internal

reference voltage

4(1)

1. Guaranteed by design, not tested in production.

µs

ΔVREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V

10(1)

TCoeff

Temperature coefficient

- 100(1)

100(1) ppm/°C

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