STM32F756VG datasheet(98/228 Pages) STMICROELECTRONICS

98 / 228 page

Electrical characteristics

STM32F756xx

98/228

DocID027589 Rev 4

Table 15. Current characteristics

Symbol

Ratings

Max.

Unit

ΣIVDD

Total current into sum of all VDD_x power lines (source)(1)

320

Σ IVSS

Total current out of sum of all VSS_x ground lines (sink)(1)

− 320

Σ IVDDUSB

Total current into VDDUSB power line (source)

IVDD

Maximum current into each VDD_x power line (source)(1)

100

IVSS

Maximum current out of each VSS_x ground line (sink)(1)

− 100

IIO

Output current sunk by any I/O and control pin

Output current sourced by any I/Os and control pin

− 25

ΣIIO

Total output current sunk by sum of all I/O and control pins (2)

120

Total output current sunk by sum of all USB I/Os

Total output current sourced by sum of all I/Os and control pins(2)

− 120

IINJ(PIN)

Injected current on FT, FTf, RST and B pins (3)

− 5/+0

Injected current on TTa pins(4)

±5

ΣIINJ(PIN)(4)

Total injected current (sum of all I/O and control pins)(5)

±25

1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the

permitted range.

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be

sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.

3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum

value.

4. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be

exceeded. Refer to Table 14: Voltage characteristics for the values of the maximum allowed input voltage.

5. When several inputs are submitted to a current injection, the maximum

ΣIINJ(PIN) is the absolute sum of the positive and

negative injected currents (instantaneous values).

Table 16. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

− 65 to +150

°C

Maximum junction temperature

125

STM32F756VG 데이터시트(PDF) 98 Page - STMicroelectronics

STM32F756VG 데이터시트(HTML) 98 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL