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STM32F756VG 데이터시트(PDF) 121 Page - STMicroelectronics |
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STM32F756VG 데이터시트(HTML) 121 Page - STMicroelectronics |
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121 / 228 page ![]() DocID027589 Rev 4 121/228 STM32F756xx Electrical characteristics 196 APB2 (up to 108 MHz) TIM1 25.2 23.9 20.4 µA/MHz TIM8 25.3 24 20.4 USART1 10.3 9.8 8.2 USART6 10.1 9.7 8.1 ADC1(5) 4.5 4.4 3.5 ADC2(5) 4.5 4.4 3.5 ADC3(5) 4.5 4.4 3.3 SDMMC1 8.5 7.9 6.7 SPI1/I2S1(3) 3.1 3 2.5 SPI4 3.1 3 2.5 SYSCFG 1.5 1.4 1 TIM9 8.8 8.4 6.9 TIM10 5.6 5.2 4.3 TIM11 5.4 5.2 4.3 SPI5 3 2.8 2.2 SPI6 3 2.8 2.2 SAI1 3.4 3.3 2.6 SAI2 3.3 3.2 2.5 LTDC 56.7 53.8 45.7 1. When the I/O compensation cell is ON, IDD typical value increases by 0.22 mA. 2. The BusMatrix is automatically active when at least one master is ON. 3. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register. 4. When the DAC is ON and EN1/2 bits are set in DAC_CR register, add an additional power consumption of 0.75 mA per DAC channel for the analog part. 5. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.73 mA per ADC for the analog part. Table 35. Peripheral current consumption (continued) Peripheral IDD(Typ)(1) Unit Scale 1 Scale 2 Scale 3 |
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