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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F756VG 데이터시트(PDF) 129 Page - STMicroelectronics |
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STM32F756VG 데이터시트(HTML) 129 Page - STMicroelectronics |
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129 / 228 page  DocID027589 Rev 4 129/228 STM32F756xx Electrical characteristics 196 Low-speed internal (LSI) RC oscillator Figure 35. LSI deviation versus temperature 5.3.11 PLL characteristics The parameters given in Table 43 and Table 44 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 42. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization results. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA Table 43. Main PLL characteristics Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock(1) -0.95(2) 12.10 MHz fPLL_OUT PLL multiplier output clock - 24 - 216 fPLL48_OUT 48 MHz PLL multiplier output clock - - 48 75 fVCO_OUT PLL VCO output - 100 - 432 |
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