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AS4SD16M16 데이터시트(PDF) 20 Page - Micross Components |
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AS4SD16M16 데이터시트(HTML) 20 Page - Micross Components |
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20 / 52 page ![]() SDRAM AS4SD16M16 AS4SD16M16 Rev. 2.6 04/13/15 Micross Components reserves the right to change products or specifications without notice. 20 CONCURRENT AUTO PRECHARGE An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. Micross SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE oc- curs are defined below. READ with Auto Precharge 1. Interrupted by a READ (with or without auto precharge); A READ to bank m will interrupt a READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 24). 2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25). FIGURE 24: READ With Auto Precharge Interrupted by a READ FIGURE 25: READ With Auto Precharge Interrupted by a WRITE |
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