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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AS4SD32M16 데이터시트(PDF) 21 Page - Micross Components |
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AS4SD32M16 데이터시트(HTML) 21 Page - Micross Components |
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21 / 52 page  SDRAM AS4SD32M16 AS4SD32M16 Rev. 2.0 10/13 Micross Components reserves the right to change products or specifications without notice. 21 WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge); A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after t WR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 4. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to the WRITE to bank m (Figure 26). FIGURE 26: WRITE With Auto Precharge Interrupted by a READ FIGURE 27: WRITE With Auto Precharge Interrupted by a WRITE |
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