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SST25WF080B 데이터시트(PDF) 23 Page - Microchip Technology |
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SST25WF080B 데이터시트(HTML) 23 Page - Microchip Technology |
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23 / 39 page ![]() 2014 Microchip Technology Inc. DS20005164C-page 23 SST25WF080B 6.5 DC Characteristics TABLE 6-5: DC OPERATING CHARACTERISTICS Symbol Parameter Limits Test Conditions Min Typ1 1. Value characterized, not fully tested in production. Max Units IDDR Read Current 6 mA CE#=0.1 VDD/0.9 VDD@30 MHz, SO=open; Single I/O IDDR2 Read Current 8 mA CE#=0.1 VDD/0.9VDD@40 MHz, SO=open IDDR3 Read Current 10 mA CE#=0.1 VDD/0.9VDD@40 MHz, SO=open; Dual I/O; IDDW Program and Erase Current 15 mA CE#=VDD ISB Standby Current 50 μA CE#=VDD, VIN=VDD or VSS IDPD Deep Power-Down 10 μA CE#=VDD, VIN=VDD or VSS ILI Input Leakage Current 2 μAVIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 2 μAVOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage -0.3 0.3 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VDD+0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 μA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 μA, VDD=VDD Min TABLE 6-6: CAPACITANCE (TA = 25°C, F=1 MHZ, OTHER PINS OPEN) Parameter Description Test Condition Maximum COUT1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Output Pin Capacitance VOUT = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF TABLE 6-7: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 100,000 Cycles JEDEC Standard A117 Status Register Write Cycle 100,000 Cycles JEDEC Standard A117 TDR1 Data Retention 20 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 |
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