SST25WF080B datasheet(13/39 Pages) MICROCHIP

13 / 39 page

 2014 Microchip Technology Inc.

DS20005164C-page 13

SST25WF080B

5.5

Page-Program

The Page-Program instruction programs up to 256

Bytes of data in the memory. The data for the selected

page address must be in the erased state (FFH) before

initiating the Page-Program operation. A Page-Pro-

gram applied to a protected memory area will be

ignored. Prior to the program operation, execute the

WREN instruction.

To execute a Page-Program operation, the host drives

CE# low, then sends the Page-Program command

cycle (02H), three address cycles, followed by the data

to be programmed, and then drives CE# high. The pro-

grammed data must be between 1 to 256 Bytes and in

whole byte increments; sending less than a full byte will

cause the partial byte to be ignored. Poll the BUSY bit

in the Status register, or wait TPP, for the completion of

the internal, self-timed, Page-Program operation. See

Figure 5-5 for the Page-Program sequence and Figure

6-8 for the Page-Program flow chart.

When executing Page-Program, the memory range for

the SST25WF080B is divided into 256-Byte page

boundaries. The device handles the shifting of more

than 256 Bytes of data by maintaining the last 256

Bytes as the correct data to be programmed. If the tar-

get address for the Page-Program instruction is not the

beginning of the page boundary (A[7:0] are not all

zero), and the number of bytes of data input exceeds or

overlaps the end of the address of the page boundary,

the excess data inputs wrap around and will be pro-

grammed at the start of that target page.

FIGURE 5-5:

PAGE-PROGRAM SEQUENCE

25164 F60.1

CE#

SCK

ADD.

01 2 3 4 5 6 7 8

ADD.

Data Byte 0

HIGH IMPEDANCE

15 16

23 24

31 32

MODE 0

MODE 3

MSB

LSB

CE#(cont’)

SO(cont’)

SI(cont’)

SCK(cont’)

40 41 42 43 44 45 46

47 48

Data Byte 1

HIGH IMPEDANCE

MSB

LSB

50 51 52 53 54 55

Data Byte 2

Data Byte 255

LSB

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