3

3 - 45

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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+8 Vdc

Gate Bias Voltage (Vgg)

-2 to 0 Vdc

RF Input Power (RFIN)(Vdd = +7 Vdc)

+15 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 105 mW/°C above 85 °C)

9.45 W

Thermal Resistance

(channel to die bottom)

9.5 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ESD Sensitivity (HBM)

Class 1A

Vdd (V)

Idd (mA)

+6.5

1305

+7.0

1300

+7.5

1295

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 1300 mA at +7.0V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Power Dissipation

7

7.5

8

8.5

9

9.5

10

10.5

-10

-6

-2

2

6

10

14

18

INPUT POWER (dBm)

8 GHz

Max Pdiss @ +85C

HMC486

v03.0109

GaAs PHEMT MMIC 2 WATT

POWER AMPLIFIER, 7 - 9 GHz