For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

4

HMC490

v03.0213

GaAs pHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Reverse Isolation vs. Temperature

-70

-60

-50

-40

-30

-20

-10

0

10

11

12

13

14

15

16

17

18

+25 C

+85 C

-55 C

FREQUENCY (GHz)

Absolute Maximum Ratings

Typical Supply Current vs. Vdd

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

+5.5 Vdc

Gate Bias Voltage (Vgg1, Vgg2, Vgg3)

-4 to 0 Vdc

RF Input Power (RFIN)(Vdd = +5 Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 19.2 mW/°C above 85 °C)

1.73 W

Thermal Resistance

(channel to die bottom)

52 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (Vdc)

Idd (mA)

+4.5

191

+5.0

200

+5.5

208

+3.0

189

+3.5

200

+4.0

208

Note: Amplifier will operate over full voltage ranges shown

above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and

+3.5V.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS