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RSQ035P03FRA 데이터시트(PDF) 1 Page - Rohm

부품명 RSQ035P03FRA
상세설명  4V Drive Pch MOS FET
PDF  8 Pages
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제조업체  ROHM [Rohm]
홈페이지  http://www.rohm.com
Logo ROHM - Rohm

RSQ035P03FRA 데이터시트(HTML) 1 Page - Rohm

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RSQ035P03
Transistor
Rev.A
1/4
4V Drive Pch MOS FET
RSQ035P03
Structure
External dimensions (Unit : mm)
Silicon P-channel MOSFET
Each lead has same dimensions
TSMT6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
1.9
2.9
0.95
0.95
0~0.1
0.16
0.85
1.0MAX
0.7
Abbreviated symbol : TM
Features
1) Low On-resistance.(65mΩ at 4.5V)
2) High Power Package.
3) High speed switching.
4) Low voltage drive. (4V)
Applications
DC-DC converter
Packaging specifications
Equivalent circuit
Taping
RSQ035P03
Type
TR
3000
Package
Basic ordering unit
(pieces)
Code
(1)
∗1
∗2
∗1 ESD PROTECTION DIODE
(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
(2)
(3)
(4)
(5)
(6)
∗2 BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter
V
V
A
A
W
°C
A
A
°C
VDSS
VGSS
IS
PD
Tch
ID
ISP
IDP
Tstg
Symbol
−30
±20
−1
−4
1.25
150
−55 to +150
Limits
Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Strage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1
∗1
∗2
±3.5
±14
Thermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol
Limits
Unit
Channel to ambient
∗ Mounted on a ceramic board.
100
∗
RSQ035P03FRA
RSQ035P03FRA
RSQ035P03FRA
AEC-Q101 Qualified


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