RSQ035P03FRA datasheet(2/8 Pages) ROHM

2 / 8 page

RSQ035P03

Transistor

Rev.A

2/4

Electrical characteristics (Ta=25°C)

Parameter

Symbol

IGSS

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Ciss

Yfs

Coss

Crss

Min.

−

−30

−

−1.0

−

2.0

−

780

−

180

130

±10

−

−1

−2.5

−

µA

VGS=±20V, VDS=0V

ID=−1

, VGS

=0V

VDS

=−30V, VGS=0V

VDS

=−10V, ID=−1.75A

VDS

=−10V, ID=−1

=−3.5A, VGS=−10V

VDS=−10V,VGS=0V

=1MHz

µA

mΩ

td(on)

−

ID=−1.75A

VDD −15V

−

VGS

=−10V

td(off)

−

=8.6Ω

−

=10Ω

Typ.

Max.

Unit

Conditions

Gate-source leakage

Gate threshold voltage

Foward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-off delay time

Rise time

Fall time

Drain-source breakdown voltage

Static drain-source on-state

resistance

Zero gate voltage drain current

Total gate charge

Gate-source charge

Gate-drain charge

Qgs

Qgd

mΩ

−

9.2

2.2

3.4

mA,

=−3.5A, VGS=−4.5V

=−1.75A, VGS=−4.0V

VDD −15V

VGS

=−5V

∗

∗PULSED

=−3.5A

Body diode characteristics (Source-drain) (Ta=25°C)

Forward voltage

VSD

−

−1.2

−

=−1A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

RSQ035P03FRA

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