BLS3135-65 datasheet(4/12 Pages) PHILIPS

부품명	BLS3135-65

상세설명	Microwave power transistor

PDF	12 Pages

Scroll/Zoom	100%

제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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4 / 12 page

1999 Aug 16

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-65

Fig.2

Load power as a function of the drive power;

typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

(2)

(3)

(W)

PD (W)

812

100

MCD750

(1)

Fig.3

Power gain as a function of load power;

typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

100

(dB)

PL (W)

MCD751

(2)

(3)

(1)

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

Fig.4

Collector efficiency as a function of load

power; typical values.

handbook, halfpage

100

ηC

(%)

PL (W)

MCD752

(2)

(1)

(3)

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