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BLS3135-65 데이터시트(PDF) 5 Page - NXP Semiconductors |
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BLS3135-65 데이터시트(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1999 Aug 16 5 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.5 Power gain as a function of frequency; typical values. handbook, halfpage 3.1 Gp (dB) 3.2 f (GHz) 3.3 3.5 10 0 8 3.4 6 4 2 MCD753 VCB = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.6 Return losses input as a function of frequency; typical values. handbook, halfpage 3.1 Return Losses (dB) 3.2 3.3 3.5 30 0 10 20 3.4 f (GHz) MCD754 Fig.7 Input impedance as a function of frequency (series components); typical values. VCB = 40 V; class-C; PL =65W. handbook, halfpage 3.1 Zi ( Ω) 3.2 f (GHz) xi ri 3.3 3.5 25 0 20 3.4 15 10 5 MCD755 Fig.8 Load impedance as a function of frequency (series components); typical values. VCB = 40 V; class-C; PL =65W. handbook, halfpage 3.1 3.2 3.3 3.5 8 4 −4 −8 0 3.4 XL RL MCD756 f (MHz) ZL ( Ω) |
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