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MB90F438LSPF 데이터시트(PDF) 51 Page - Cypress Semiconductor |
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MB90F438LSPF 데이터시트(HTML) 51 Page - Cypress Semiconductor |
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51 / 61 page ![]() MB90435 Series 50 DS07-13727-2E 6. Flash Memory Program/Erase Characteristics Parameter Condition Value Units Remarks Min Typ Max Sector erase time TA = + 25 °C VCC = 5.0 V ⎯ 1 15 s Excludes 00H programming prior erasure Chip erase time ⎯ 5 ⎯ s MB90F438L (S) Excludes 00H programming prior erasure 7 ⎯ s MB90F439 (S) Word (16 bit width) programming time ⎯ 16 3,600 µs Excludes system-level overhead Erase/Program cycle ⎯ 10,000 ⎯⎯ cycle |
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