| 전자부품 데이터시트 검색엔진 |
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LMX2332LSLB 데이터시트(PDF) 7 Page - National Semiconductor (TI) |
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LMX2332LSLB 데이터시트(HTML) 7 Page - National Semiconductor (TI) |
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7 / 21 page ![]() Charge Pump Current Specification Definitions Note 6: IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage = [1⁄2 * {|I1| − |I3|}]/[1⁄2 * {|I1| + |I3|}] * 100% and [1⁄2 * {|I4| − |I6|}]/[1⁄2 * {|I4| + |I6|}] * 100% Note 7: IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch = [|I2| − |I5|]/[1⁄2 * {|I2| + |I5|}] * 100% Note 8: IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature = [|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100% and [|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100% DS012806-37 I1 = CP sink current at VDo = VP − ∆V I2 = CP sink current at VDo = VP/2 I3 = CP sink current at VDo = ∆V I4 = CP source current at VDo = VP − ∆V I5 = CP source current at VDo = VP/2 I6 = CP source current at VDo = ∆V ∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V. www.national.com 7 |
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