NTJS4151P datasheet(1/5 Pages) ONSEMI

부품명	NTJS4151P

상세설명	Trench Power MOSFET

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August, 2014 − Rev. 3

1

Publication Order Number:

NTJS4151P/D

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

• Leading Trench Technology for Low RDS(ON) Extending Battery Life

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Gate Diodes for ESD Protection

• Pb−Free Package is Available

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25 °C

ID

−3.3

A

TA = 85 °C

−2.4

t ≤ 5 s

TA = 25 °C

−4.2

Power Dissipation

(Note 1)

Steady

State

TA = 25 °C

PD

1.0

W

Pulsed Drain Current

tp = 10 ms

IDM

−10

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−1.3

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

ESD

Human Body Model (HBM)

ESD

4000

V

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

RqJA

125

°C/W

Junction−to−Ambient − t ≤ 5 s

RqJA

75

Junction−to−Lead – Steady State

RqJL

45

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Top View

http://onsemi.com

SC−88 (SOT−363)

D

S

D

6

5

4

1

2

3

V(BR)DSS

RDS(on) Typ

ID Max

47 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.2 A

G

−20 V

SC−88/SOT−363

CASE 419B

MARKING DIAGRAM &

PIN ASSIGNMENT

TY M G

G

1

6

1

TY

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

See detailed ordering and shipping information ion page 4 of

this data sheet.

ORDERING INFORMATION

유사한 부품 번호 - NTJS4151P

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	NTJS4151P	143Kb / 5P	Trench Power MOSFET ??0 V, ??.2 A, Single P?묬hannel, SC??8 February, 2006 ??Rev. 1
	NTJS4151PT1	143Kb / 5P	Trench Power MOSFET ??0 V, ??.2 A, Single P?묬hannel, SC??8 February, 2006 ??Rev. 1
	NTJS4151PT1G	143Kb / 5P	Trench Power MOSFET ??0 V, ??.2 A, Single P?묬hannel, SC??8 February, 2006 ??Rev. 1
VBsemi Electronics Co.,...	NTJS4151PT1G	1Mb / 9P	P-Channel 20 V (D-S) MOSFET

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