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NTJS4151P 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NTJS4151P
상세설명  Trench Power MOSFET
PDF  5 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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NTJS4151P 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−12
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = −16 V,
VDS = 0 V
TJ = 25°C
−1.0
mA
TJ = 85°C
−5.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±4.5 V
±1.5
mA
VDS = 0 V, VGS = ±12 V
±10
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.40
−1.2
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
4.0
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −3.3 A
47
60
mW
VGS = −2.5 V, ID = −2.3 A
70
85
VGS = −1.8 V, ID = −1.0 A
180
205
Forward Transconductance
gFS
VGS = −10 V, ID = −3.3 A
12
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
850
pF
Output Capacitance
COSS
160
Reverse Transfer Capacitance
CRSS
110
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V,
ID = −3.3 A
10
nC
Gate−to−Source Charge
QGS
1.5
Gate−to−Drain Charge
QGD
2.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
0.85
ms
Rise Time
tr
1.7
Turn−Off Delay Time
td(OFF)
2.7
Fall Time
tf
4.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −1.3 A,
TJ = 25°C
−0.75
−1.2
V
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100
A/ms,
IS = −1.3 A
63
ns
Charge Time
Ta
9.0
Discharge Time
Tb
54
Reverse Recovery Charge
QRR
0.23
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.



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