Doc ID024715 Rev 2

3/8

FERD30S50

Characteristics

8

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Average forward current versus

ambient temperature (

 = 0.5)

0

4

8

12

16

20

24

0

5

10

15

20

25

30

35

40

d = 1

d = 0.05

d = 0.2

d = 0.1

d = 0.5

PF(AV)(W)

I

(A)

F(AV)

T

tp

IF(AV)(A)

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

R th(j-a) = R th(j-c)

T

tp

T

(°C)

amb

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Reverse leakage current versus

reverse voltage applied (typical values)

Z th( j- c)/ Rth ( j- c )

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp (s)

IR(A)

m

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

35

40

45

50

Tj = 125 °C

Tj = 25 °C

VR(V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values)

Figure 6. Forward voltage drop versus forward

current (typical values)

100

1000

10000

1

10

100

C(pF)

F = 1 MHz

T

IF(A )

0.1

1.0

10.0

100.0

0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55

VF (V)

Tj = 125 °C

Tj = 25 °C