STTH15S12 datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

Characteristics

STTH15S12

2/10

DocID026656 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.9 x IF(AV) + 0.0533 IF

(RMS)

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Tc = 100 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

130

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

1.4

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

400

(2)

Forward voltage drop

Tj = 25 °C

IF = 15 A

3.1

Tj = 150 °C

1.9

2.7

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V,

dIF/dt = 200 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 15 A, VR = 600 V,

dIF/dt = 200 A/µs

Softness factor

QRR

Reverse recovery charge

1300

STTH15S12 데이터시트(PDF) 2 Page - STMicroelectronics

STTH15S12 데이터시트(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

데이터시트 다운로드

링크 URL