STTH15S12 datasheet(4/10 Pages) STMICROELECTRONICS

부품명	STTH15S12

상세설명	Low reverse current

PDF	10 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

4 / 10 page

Characteristics

STTH15S12

4/10

DocID026656 Rev 1

Figure 7. Reverse recovery charges versus

dIF/dt (typical values)

Figure 8. Reverse recovery softness factor

versus dIF/dt (typical values)

400

800

1200

1600

2000

100

150

200

250

300

350

400

450

500

QRR(nC)

F = I F(AV)

R = 600 V

j = 125 °C

dIF/dt(A/µs)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

150

200

250

300

350

400

450

500

SFACTOR

F = I F(AV)

R = 600 V

j = 125 °C

dIF/dt(A/µs)

Figure 9. Relative variations of dynamic

parameters versus junction temperature

Figure 10. Junction capacitance versus reverse

voltage applied (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

FACTOR

F = I F(AV)

R = 600 V

Reference: T

j = 125 °C

Tj(°C)

C(pF)

100

1000

10000

F = 1 MHz

OSC = 30 mVRMS

j = 25 °C

R (V)

STTH15S12 데이터시트(PDF) 4 Page - STMicroelectronics

STTH15S12 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

데이터시트 다운로드

링크 URL