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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STGP30V60F 데이터시트(PDF) 1 Page - STMicroelectronics |
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STGP30V60F 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 19 page  This is information on a product in full production. April 2014 DocID025049 Rev 4 1/19 19 STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) G (1) E (3) D2PAK TO-220 1 3 TAB 1 2 3 TAB Table 1. Device summary Order codes Marking Package Packaging STGB30V60F GB30V60F D2PAK Tape and reel STGP30V60F GP30V60F TO-220 Tube www.st.com |
유사한 부품 번호 - STGP30V60F |
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유사한 설명 - STGP30V60F |
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