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STGP30V60F 데이터시트(PDF) 4 Page - STMicroelectronics |
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STGP30V60F 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 19 page ![]() Electrical characteristics STGB30V60F, STGP30V60F 4/19 DocID025049 Rev 4 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A 1.85 2.3 V VGE = 15 V, IC = 30 A TJ = 125 °C 2.15 VGE = 15 V, IC = 30 A TJ = 175 °C 2.35 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA |
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