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STGFW20V60DF 데이터시트(PDF) 7 Page - STMicroelectronics

부품명 STGFW20V60DF
상세설명  Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW20V60DF 데이터시트(HTML) 7 Page - STMicroelectronics

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STGFW20V60DF
Electrical characteristics
DocID026148 Rev 2
7/15
Figure 8: Transfer characteristics
Figure 9: Diode VF vs. forward current
Figure 10: Normalized VGE(th) vs. junction temperature
Figure 11: Normalized V(BR)CES vs. junction
temperature
Figure 12: Capacitance variations
Figure 13: Gate charge vs. gate-emitter voltage
AM17173v1
TJ=175°C
10
20
30
40
50
60
70
7
8
9
10
11
IC(A)
VGE(V)
-40°C
25°C
VCE = 10 V
AM17178v1
0.8
1.2
1.6
2
2.4
10
15
20
25
30
35
VF(V)
IF (A)
T =175 °C
25°C
-40°C
J
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50
0
50
100
150
VGE(th)
norm
TJ(ºC)
VCE = VGE
IC = 1mA
AM17180v1
0.9
1.0
1.1
-50
0
50
100
150
V(BR)ces
norm
TJ(ºC)
IC= 2 mA
AM17183v1
10
100
1000
0.1
1
10
C (pF)
VCE(V)
Cres
Coes
Cies
AM17182v1
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
VGE(V)
Qg (nC)
VCC = 480 V
IC = 20 A



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