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STGFW20V60DF 데이터시트(PDF) 1 Page - STMicroelectronics |
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STGFW20V60DF 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() February 2017 DocID026148 Rev 2 1/15 This is information on a product in full production. www.st.com STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 °C Very high speed switching series Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 20 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGFW20V60DF G20V60DF TO-3PF Tube 1 2 3 TO-3PF C (2) G (1) E (3) Sc12850_no_tab |
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