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STGFW30V60DF 데이터시트(PDF) 8 Page - STMicroelectronics |
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STGFW30V60DF 데이터시트(HTML) 8 Page - STMicroelectronics |
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8 / 15 page ![]() Electrical characteristics STGFW30V60DF 8/15 DocID026149 Rev 1 Figure 14. Switching losses vs. collector current Figure 15. Switching losses vs. gate resistance Figure 16. Switching losses vs. junction temperature Figure 17. Switching losses vs. collector emitter voltage Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance E(μJ) 0 0 IC(A) 400 10 20 200 600 30 40 VCC=400V, VGE=15V Rg=10Ω, Tj=175°C 800 1000 1200 1400 Eon Eoff 50 60 1600 1800 2000 AM17423v1 E(μJ) 0 Rg(Ω) 400 10 20 200 600 30 40 VCC=400V, VGE=15V IC=30A, Tj=175°C 800 1000 1200 Eon Eoff AM17424v1 E(μJ) 25 TJ(°C) 200 50 75 100 300 100 125 VCC=400V, VGE=15V IC=30A, Rg=10Ω 400 500 600 Eon Eoff 150 0 700 800 AM17425v1 E(μJ) 150 VCE(V) 500 200 250 100 900 300 350 VGE=15V, Tj=175°C IC=30A, Rg=10Ω Eon Eoff 300 700 1100 400 450 AM17426v1 t(ns) 0 IC(A) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V Rg=10Ω tdoff tdon 100 tf tr 50 60 AM17427v1 t(ns) 0 Rg(Ω) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V IC=30A tdoff tdon 100 tr tf 1000 AM17428v1 |
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