 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
G30M65DF2 데이터시트(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
G30M65DF2 데이터시트(HTML) 1 Page - STMicroelectronics |
|
|
1 / 16 page  April 2017 DocID027355 Rev 3 1/16 This is information on a product in full production. www.st.com STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGP30M65DF2 G30M65DF2 TO-220 Tube 1 2 3 TO-220 TAB |
유사한 부품 번호 - G30M65DF2 |
|
유사한 설명 - G30M65DF2 |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
