G30M65DF2 datasheet(5/16 Pages) STMICROELECTRONICS

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STGP30M65DF2

Electrical characteristics

DocID027355 Rev 3

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Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

VGE = 15 V, RG = 10

(see Figure 29: "Test circuit for

inductive load switching" )

31.6

Current rise time

13.4

(di/dt)on

Turn-on current slope

1791

A/µs

td(off)

Turn-off-delay time

115

Current fall time

110

Eon(1)

Turn-on switching energy

0.3

Eoff(2)

Turn-off switching energy

0.96

Ets

Total switching energy

1.26

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

VGE = 15 V, RG = 10

Ω,

TJ = 175 °C

(see Figure 29: " Test circuit

for inductive load switching" )

Current rise time

(di/dt)on

Turn-on current slope

1435

A/µs

td(off)

Turn-off-delay time

116

Current fall time

194

Eon(1)

Turn-on switching energy

0.67

Eoff(2)

Turn-off switching energy

1.36

Ets

Total switching energy

2.03

tsc

Short-circuit withstand

time

VCC

≤ 400 V, VGE = 13 V,

TJstart = 150 °C

µs

VCC

≤ 400 V, VGE = 15 V,

TJstart = 150 °C

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 30 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 29: "Test circuit for

inductive load switching")

140

Qrr

Reverse recovery charge

880

Irrm

Reverse recovery current

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

650

A/µs

Err

Reverse recovery energy

115

µJ

trr

Reverse recovery time

IF = 30 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs,

TJ = 175 °C

(see Figure 29: "Test circuit for

inductive load switching")

244

Qrr

Reverse recovery charge

2743

Irrm

Reverse recovery current

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

220

A/µs

Err

Reverse recovery energy

320

µJ

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