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90N10F7 데이터시트(PDF) 1 Page - STMicroelectronics |
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90N10F7 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() March 2015 DocID024551 Rev 4 1/14 This is information on a product in full production. www.st.com STL90N10F7 N- channel 100 V, 0.007 Ω typ., 70 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 0.008 Ω 70 A 100 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT™ 5x6 Tape and reel 1 2 3 4 PowerFLAT™ 5x6 |
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