P105N3LL datasheet(3/13 Pages) STMICROELECTRONICS

부품명	P105N3LL

상세설명	Low gate drive power losses

PDF	13 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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3 / 13 page

DocID023976 Rev 2

3/13

STP105N3LL

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

Gate-source voltage

± 20

Continuous drain current at T

= 25 °C

(silicon limited)

150

Continuous drain current at T

= 100 °C

(silicon limited)

105

Continuous drain current at T

= 25 °C

(package limited)

(1)

Pulse width limited by safe operating area

Pulsed drain current

320

TOT

Total dissipation at T

= 25 °C

140

Derating factor

0.9

W/°C

(2)

Starting T

= 25°C, I

= 40 A

Single pulse avalanche energy

150

stg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max

1.1

°C/W

thj-amb

Thermal resistance junction-ambient max

62.5

°C/W

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