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P105N3LL 데이터시트(PDF) 5 Page - STMicroelectronics |
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P105N3LL 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() DocID023976 Rev 2 5/13 STP105N3LL Electrical characteristics 13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 80 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 40 A, V GS = 0 - 1.1 V t rr Reverse recovery time I SD = 80 A, di/dt = 100 A/μs, V DD = 24 V Figure 15 -28.6 ns Q rr Reverse recovery charge - 22.8 nC I RRM Reverse recovery current - 1.6 A |
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