January 2017

DocID026750 Rev 3

1/12

This is information on a product in full production.

www.st.com

STW48N60M2-4

N-

channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2

Power MOSFET in a TO247-4 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STW48N60M2-4

650 V

0.07 Ω

42 A



Excellent switching performance thanks to

the extra driving source pin



Extremely low gate charge





100% avalanche tested



Zener-protected

Applications



High efficiency switching applications:



Servers



PV inverters



Telecom infrastructure



Multi kW battery chargers

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STW48N60M2-4

48N60M2

TO247-4

Tube