48N60M2 datasheet(5/12 Pages) STMICROELECTRONICS

부품명	48N60M2

상세설명	Extremely low gate charge

PDF	12 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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5 / 12 page

STW48N60M2-4

Electrical characteristics

DocID026750 Rev 3

5/12

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

ISDM(1)

Source-drain

current (pulsed)

168

VSD(2)

Forward on

voltage

ISD = 21 A, VGS = 0

1.6

trr

Reverse recovery

time

ISD = 42 A,

di/dt = 100 A/µs

VDD = 60 V

See Figure 16: " Test circuit for

inductive load switching and diode

recovery times"

487

Qrr

Reverse recovery

charge

9.1

µC

IRRM

Reverse recovery

current

37.5

trr

Reverse recovery

time

ISD = 42 A,

di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

See Figure 16: " Test circuit for

inductive load switching and diode

recovery times"

605

Qrr

Reverse recovery

charge

12.5

µC

IRRM

Reverse recovery

current

41.5

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

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