Characteristics

T1610H

4/9

DocID024630 Rev 1

Figure 5. Relative variation of gate trigger

current and voltage versus junction

temperature (typical values)

Figure 6. Relative variation of holding and

latching current versus junction temperature

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-30

-10

10

30

50

70

90

110

130

150

I , I [T ] / I , I [T = 25 °C]

HL

j

H

L

j

0.0

0.5

1.0

1.5

2.0

2.5

-50

-30

-10

10

30

50

70

90

110

130

150

T (°C)

j

Figure 7. Relative variation of dV/dt immunity

versus junction temperature (typical values)

Figure 8. Relative variation of critical rate of

decrease of main current (di/dt)c versus

junction temperature (typical values)

dV/dt [T ] / dV/dt [T = 150 °C]

jj

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

25

50

75

100

125

150

T (°C)

j

(dl/dt) [T ] / (dl/dt) [T = 150 °C]

jj

cc

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

25

50

75

100

125

150

T (°C)

j

Figure 9. Relative variation of critical rate of

decrease of main current (di/dt)c versus

reapplied (dV/dt)c

Figure 10. Surge peak on-state current versus

number of cycles

(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c

0

1

2

3

0.1

1.0

10.0

100.0

(dV/dt c (V/µs)

)

I

(A)

TSM

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

1

10

100

1000

Non repetitive

Non repetitive

Repetitive

One cycle

t = 20 ms

Number of cycles