DocID024630 Rev 1

5/9

T1610H

Characteristics

Figure 13. Relative variation of leakage current versus junction temperature for different values of

blocking voltage (typical values)

Figure 11. Non repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding value of I²t

Figure 12. On-state characteristics (maximum

values)

I

(A), I²t (A²s)

TSM

10

100

1000

10000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/µs

I²t

t (ms)

p

sinusoidal pulse with width t <10 ms

p

1

10

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

\

I

, I

[T ; V

, V

] / I

, I

[T = 150 °C; 600 V]

DRM

RRM

j

DRM

RRM

DRM

RRM

j

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

25

50

75

100

125

150

T (°C)

j