SPC56EL70L3 datasheet(84/128 Pages) STMICROELECTRONICS

84 / 128 page

Electrical characteristics

SPC56EL70L3, SPC56EL70L5,PC564L70L3, SPC564L70L5

84/128

DocID023953 Rev 5

ICMaxDC

Maximum peak collector current

1.0

VCESAT

Collector-to-emitter saturation

voltage(Max)

600(2)

VBE

Base-to-emitter voltage (Max)

1.0

1. Derating factor 12mW/degC.

2. Adjust resistor at bipolar transistor collector for 3.3V to avoid VCE<VCESAT.

The recommended external ballast transistor is the bipolar transistor BCP68 with the gain range of 85 up

to 375 (for IC=500mA, VCE=1V) provided by several suppliers. This includes the gain variations BCP68-

10, BCP68-16 and BCP68-25.The most important parameters for the interoperability with the integrated

voltage regulator are the DC current gain (hFE) and the temperature coefficient of the gain (XTB). While

the specified gain range of most BCP68 vendors is the same, there are slight variations in the

temperature coefficient parameter. Voltage regulator operation was simulated against the typical

variation on temperature coefficient and against the specified gain range to have a robust design.

Table 18. Voltage regulator electrical specifications

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Cext

External decoupling/

stability capacitor

Min, max values shall be

granted with respect to

tolerance, voltage,

temperature, and aging

variations.

—

µF

SR Combined ESR of

external capacitor

—1

—

100



SR Number of pins for

external decoupling/

stability capacitor

—5

—

CV1V2 SR Total capacitance on

1.2 V pins

Ceramic capacitors,

taking into account

tolerance, aging, voltage

and temperature

variation

300

—

900

tSU

Start-up time after main

supply stabilization

Cload = 10 µF × 4

—

2.5

—

Main High Voltage

Power - Low Voltage

Detection, upper

threshold

——

—

2.93

—

Main supply low voltage

detector, lower threshold

—2.6

—

Table 17. Recommended operating characteristics (continued)

Symbol

Parameter

Value

Unit

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