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LQFP100 데이터시트(PDF) 69 Page - STMicroelectronics

부품명 LQFP100
상세설명  Up to 60 DMIPs operation
PDF  116 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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LQFP100 데이터시트(HTML) 69 Page - STMicroelectronics

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SPC560B40x/50x, SPC560C40x/50x
Package pinouts and signal descriptions
115
3.19.2
Flash power supply DC characteristics
Table 32 shows the power supply DC characteristics on external supply.
Table 31. Flash read access timing
Symbol
C
Parameter
Conditions(1)
1.
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
Max
Unit
fREAD
CC
P
Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
Table 32. Flash memory power supply DC electrical characteristics
Symbol
C
Parameter
Conditions(1)
Value
Unit
Min
Typ
Max
IFREAD
(2)
CC D
Sum of the current consumption on
VDD_HV and VDD_BV on read
access
Code flash memory module read
fCPU = 64 MHz
(3)
—15
33
mA
Data flash memory module read
fCPU = 64 MHz
(3)
—15
33
IFMOD
(2) CC D
Sum of the current consumption on
VDD_HV and VDD_BV on matrix
modification (program/erase)
Program/Erase ongoing while
reading code flash memory
registers fCPU = 64 MHz
(3)
—15
33
mA
Program/Erase ongoing while
reading data flash memory
registers fCPU = 64 MHz
(3)
—15
33
IFLPW CC D
Sum of the current consumption on
VDD_HV and VDD_BV
During code flash memory low-
power mode
——
900
µA
During data flash memory low-
power mode
——
900
IFPWD CC D
Sum of the current consumption on
VDD_HV and VDD_BV
During code flash memory
power-down mode
——
150
µA
During data flash memory power-
down mode
——
150
1.
VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
2.
This value is only relative to the actual duration of the read cycle
3.
fCPU 64 MHz can be achieved only at up to 105 °C



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