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ST7LITE49K2 데이터시트(PDF) 211 Page - STMicroelectronics

부품명 ST7LITE49K2
상세설명  Communication interfaces
PDF  245 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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ST7LITE49K2 데이터시트(HTML) 211 Page - STMicroelectronics

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ST7LITE49K2
Electrical characteristics
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13.7
Memory characteristics
TA = -40 °C to 125 °C, unless otherwise specified.
Table 89.
RAM and hardware registers characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
Halt mode (or Reset)
1.6
V
Table 90.
Flash program memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash
write/erase
Refer to operating
range of VDD with TA,
Section 13.3.1 on
page 195
2.4
5.5
V
tprog
Programming time for 1~32
bytes(1)
1.
Up to 32 bytes can be programmed at a time.
TA=−40 to +125 °C
5
10
ms
Programming time for 4 kbytes
TA=+25 °C
0.64
1.28
s
tRET
Data retention(2)
2.
Data based on reliability test results and monitored in production.
TA=+55 °C
(3)
3.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25 °C
10k
cycles
IDD
Supply current(4)
4.
Guaranteed by Design. Not tested in production.
Read / Write / Erase
modes
fCPU = 8 MHz,
VDD = 5.5 V
2.6
mA
No Read/No Write
mode
100
μA
Power down mode /
Halt
00.1
μA
Table 91.
Data EEPROM memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for
EEPROM Write/Erase
Refer to operating range of
VDD with TA, Section 13.3.1 on
page 195
2.4
5.5
V
tprog
Programming time for
1~32 bytes
TA=−40 to +125 °C
5
10
ms
tret
Data retention(1)
1.
Data based on reliability test results and monitored in production.
TA=+55 °C
(2)
2.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25 °C
300K cycles



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