STM8L151C3 datasheet(75/122 Pages) STMICROELECTRONICS

75 / 122 page

DocID018780 Rev 9

75/122

STM8L151x2, STM8L151x3

Electrical parameters

102

Figure 17. LSE oscillator circuit diagram

Internal clock sources

Subject to general operating conditions for VDD, and TA.

High speed internal RC oscillator (HSI)

In the following table, data is based on characterization results, not tested in production,

unless otherwise specified.

Table 32. HSI oscillator characteristics

Symbol

Parameter

Conditions(1)(2)

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

ACCHSI

Accuracy of HSI

oscillator (factory

calibrated)

VDD = 3.0 V, TA = 25 °C

-1 (3)

-1(3)

VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C

-1.5

1.5

VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C

-2

VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C

-2.5

VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C

-4.5

1.65 V

≤VDD ≤ 3.6 V,

-40 °C

≤TA ≤ 125 °C

-4.5

TRIM

HSI user trimming

step(4)

Trimming code

≠ multiple of 16

0.4

0.7

Trimming code = multiple of 16

± 1.5

tsu(HSI)

HSI oscillator setup

time (wakeup time)

3.7

6(5)

µs

IDD(HSI)

HSI oscillator power

consumption

100

140(5)

µA

1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.

2. TA > 85 °C is valid only for devices with suffix 3 temperature range.

3. Tested in production.

4. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16

(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for

more details.

5. Guaranteed by design.

STM8L151C3 데이터시트(PDF) 75 Page - STMicroelectronics

STM8L151C3 데이터시트(HTML) 75 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL