STM8L151X6 datasheet(85/142 Pages) STMICROELECTRONICS

85 / 142 page

DocID15962 Rev 15

85/142

STM8L151x4/6, STM8L152x4/6

Electrical parameters

115

Figure 18. LSE oscillator circuit diagram

Internal clock sources

Subject to general operating conditions for VDD, and TA.

High speed internal RC oscillator (HSI)

In the following table, data is based on characterization results, not tested in production,

unless otherwise specified.

Table 33. HSI oscillator characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

ACCHSI

Accuracy of HSI

oscillator (factory

calibrated)

VDD = 3.0 V, TA = 25 °C

-1 (2)

-1(2)

VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C

-1.5

1.5

VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C

-2

VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C

-2.5

VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C

-4.5

1.65 V

≤VDD ≤ 3.6 V,

-40 °C

≤TA ≤ 125 °C

-4.5

TRIM

HSI user trimming

step(3)

Trimming code

≠ multiple of 16

0.4

0.7

Trimming code = multiple of 16

± 1.5

tsu(HSI)

HSI oscillator setup

time (wakeup time)

3.7

6(4)

µs

IDD(HSI)

HSI oscillator power

consumption

100

140(4)

µA

1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.

2. Tested in production.

3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16

(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for

more details.

4. Guaranteed by design.

STM8L151x6 데이터시트(PDF) 85 Page - STMicroelectronics

STM8L151x6 데이터시트(HTML) 85 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL