STM32F070F6 datasheet(56/83 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F070CB/RB/C6/F6

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DocID027114 Rev 3

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 15 for standard I/Os, and in Figure 16 for

5 V tolerant I/Os. The following curves are design simulation results, not tested in

production.

Ilkg

Input leakage

current(2)

TC, FT and FTf I/O

TTa in digital mode

VSS ≤ VIN ≤ VDDIOx

± 0.1

µA

TTa in digital mode

VDDIOx ≤ VIN ≤ VDDA

TTa in analog mode

VSS ≤ VIN ≤ VDDA

± 0.2

FT and FTf I/O (3)

VDDIOx ≤ VIN ≤ 5 V

RPU

Weak pull-up

equivalent resistor

(4)

VIN = VSS

RPD

Weak pull-down

equivalent

resistor(4)

VIN = VDDIOx

CIO

I/O pin capacitance

1. Data based on design simulation only. Not tested in production.

2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 44:

I/O current injection susceptibility.

3. To sustain a voltage higher than VDDIOx + 0.3 V, the internal pull-up/pull-down resistors must be disabled.

4. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

Table 45. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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