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STM32F070F6 데이터시트(PDF) 51 Page - STMicroelectronics

부품명 STM32F070F6
상세설명  Reset and power management
PDF  83 Pages
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STM32F070F6 데이터시트(HTML) 51 Page - STMicroelectronics

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STM32F070CB/RB/C6/F6
Electrical characteristics
69
6.3.9
PLL characteristics
The parameters given in Table 37 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions.
6.3.10
Memory characteristics
Flash memory
The characteristics are given at TA = -40 to 85 °C unless otherwise specified.
tsu(LSI)(2)
LSI oscillator startup time
-
-
85
µs
IDDA(LSI)(2) LSI oscillator power consumption
-
0.75
-
µA
1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Table 36. LSI oscillator characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
Table 37. PLL characteristics
Symbol
Parameter
Value
Unit
Min
Typ
Max
fPLL_IN
PLL input clock(1)
1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the
range defined by fPLL_OUT.
1(2)
8.0
24(2)
MHz
PLL input clock duty cycle
40(2)
-60(2)
%
fPLL_OUT
PLL multiplier output clock
16(2)
-48
MHz
tLOCK
PLL lock time
-
-
200(2)
2. Guaranteed by design, not tested in production.
µs
JitterPLL
Cycle-to-cycle jitter
-
-
300(2)
ps
Table 38. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time TA = -40 to +85 °C
-
53.5
-
µs
tERASE Page erase time (2)
2. Page size is 1KB for STM32F070x6 devices and 2KB for STM32F070xB devices.
TA = -40 to +85 °C
-
30
-
ms
tME
Mass erase time
TA = -40 to +85 °C
-
30
-
ms
IDD
Supply current
Write mode
-
-
10
mA
Erase mode
-
-
12
mA
Vprog
Programming voltage
-
2.4
-
3.6
V



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