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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32F398VE 데이터시트(PDF) 91 Page - STMicroelectronics |
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STM32F398VE 데이터시트(HTML) 91 Page - STMicroelectronics |
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91 / 151 page  DocID027227 Rev 2 91/151 STM32F398VE Electrical characteristics 142 Table 46. Asynchronous multiplexed PSRAM/NOR read timings(1) 1. Based on characterization, not tested in production Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK-0.5 9THCLK+1 ns tv(NOE_NE) FMC_NEx low to FMC_NOE low 5THCLK 5THCLK+1 tw(NOE) FMC_NOE low time 4THCLK-2 4THCLK+2 th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 - tv(A_NE) FMC_NEx low to FMC_A valid - 1.5 tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 2 tw(NADV) FMC_NADV low time 4THCLK-2 4THCLK+2 th(AD_NADV) FMC_AD(address) valid hold time after FMC_NADV high 0 - th(A_NOE) Address hold time after FMC_NOE high THCLK-0.5 - th(BL_NOE) FMC_BL time after FMC_NOE high 0 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 tsu(Data_NE) Data to FMC_NEx high setup time THCLK - tsu(Data_NOE) Data to FMC_NOE high setup time THCLK+1 - th(Data_NE) Data hold time after FMC_NEx high 0 - th(Data_NOE) Data hold time after FMC_NOE high 0 - |
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